NaMLab

NaMLab GmbH is a research organization and associated institute of the Technical University Dresden. NaMLab provides industry oriented and basic research in material science forelectron devices. It concentrates on new and promising nano-electronic materials for tomorrow’s semiconductor and energy conversion applications. This includes the integration of these new materials into future devices with nano-scale dimensions. NaMLab has an industry experienced staff. It combines basic research with methodologies that are proven in semiconductor industry. Working out a clear view of the target application and its specification is an integral part of NaMLab´s material research. Major expertise of NaMLab is in the field of electrical characterization, devices (especially for memory applications) and integration of new materials into semiconductor technology.

Since 2009 NaMLab is continuously involved in the research in that field and partners with many international research organizations and major industry players. NaMLab concentrates expertise in the fields of material and device development with focus on dielectrics, physical and electrical characterization as well as modeling and simulation.

NaMLab Group

NaMLab will focus on two research and development topics within the project: the investigation of multiferroic properties of doped HfO2 on material at capacitor level and the development of voltage-controlled resistive and magnetic switching devices.

For the first topic, NaMLab targets on an optimization of the dopant material (e.g. Al, Si, Ge) for a HfO2 or ZrO2 or a mixed ZrxHf1-xO2 ferroelectrics which can be grown by atomic layer deposition (ALD) or physical vapour deposition (PVD). Dielectric and ferroelectric device parameters are determined by structural/physical and electrical characterization (remanent polarization, field cycling and leakage behavior) of capacitor structures.

For the second topic, NaMLab will collaborate with the project partners to cointegrate these ferroelectric HfO2-based films with Gr based stacks on oxides to realize the concept of an electrical-field switched resistive-magnetic memory. NaMLab gGmbH will participate in the fabrication of FEbased prototypes and lead the developing of the FE-memory devices.

Dr. Stefan Slesazeck

Senior Scientist

Dr. Halid Mulaosmanovic

Ferroelectric switching.

Prof. Dr.-Ing. Thomas Mikolajick

Dr. Patrick Lomenzo

Dr. Uwe Schroeder

FE-HfO2 material.